Littelfuse, Inc. has introduced the SM24CANA Series 200 W TVS Diode Array (SPA® Diodes) to protect automotive Controller Area Network (CAN) Bus from damage due to electrostatic discharge (ESD), ...

A diode makes 12V car electronics safer and simpler. It cuts extra parts, reduces power loss, and keeps important systems ...

CHICAGO, June 6, 2013 – Littelfuse, Inc., the global leader in circuit protection, has introduced the SP3051-04HTG Transient Voltage Suppression (TVS) Diode Array (SPA® Diode), the latest addition to ...

Manufacturers of circuit protection devices continue to enhance the performance of their safety components to protect electronic devices and equipment, ranging from smartphones and wearables to data ...

Nexperia, the pioneer in essential semiconductors announced an extension to its portfolio of extremely low clamping and ultra-low capacitance ESD protection diodes. This portfolio is designed to ...

Littelfuse, Inc. has introduced the low-capacitance SP3014 Series TVS Diode Array (SPA® Diodes), to provide protection for electronic equipment that may experience destructive electrostatic ...

VETH100A1DD1 is a bidirectional ESD protection diode for automotive Ethernet, compliant with OPEN Alliance 100Base-T1 and 1000Base-T1. Made by Vishay, it comes in a wettable flank DFN1006-2B package ...

Designing automotive electronics presents numerous technical challenges, including the need to protect against electrical hazards under the hood and in the cabin. The three major sources of electrical ...

Littelfuse, Inc., an industrial technology manufacturing company empowering a sustainable, connected, and safer world, today announced the launch of the TPSMB-L Series Automotive TVS Diodes, designed ...

Littelfuse has launched its 5.0SMDJ-FB TVS Diode Series, a 5000 W surface-mount solution in a DO-214AB package engineered to protect sensitive DC power lines from overvoltage transients. The series ...

Electrostatic discharge (ESD) protection is critical at advanced nodes to safeguard designs against effects intensified by shrinking transistor dimensions and oxide layer thicknesses. On the other ...